Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction
نویسندگان
چکیده
منابع مشابه
Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction
A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance ass...
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ژورنال
عنوان ژورنال: Sensors
سال: 2015
ISSN: 1424-8220
DOI: 10.3390/s150717036